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STMicroelectronics Breaks the 20nm Barrier for Cost-competitive Next-generation Microcontrollers

STMicroelectronics Breaks the 20nm Barrier for Cost-competitive Next-generation Microcontrollers

意法半导体突破20纳米壁垒,打造具有成本竞争力的下一代微控制器
意法半导体 ·  03/19 00:00

STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronic applications, announces an advanced process based on 18nm Fully Depleted Silicon On Insulator (FD-SOI) technology with embedded phase change memory (ePCM) to support next-generation embedded processing devices. This new process technology, co-developed by ST and Samsung Foundry, delivers a leap in performance and power consumption for embedded processing applications while allowing larger memory sizes and higher levels of integration of analog and digital peripherals. The first next-generation STM32 microcontroller based on the new technology will start sampling to selected customers in the second half of 2024, with production planned for the second half of 2025.

为各种电子应用客户提供服务的全球半导体领导者意法半导体(纽约证券交易所代码:STM)宣布推出一种基于18纳米完全耗尽绝缘体(FD-SOI)技术的先进工艺,采用嵌入式相变存储器(ePCM),以支持下一代嵌入式处理设备。这项由意法半导体和三星Foundry共同开发的新工艺技术为嵌入式处理应用带来了性能和功耗的飞跃,同时允许更大的内存容量和更高的模拟和数字外设集成水平。基于新技术的首款下一代 STM32 微控制器将于 2024 年下半年开始向选定客户进行样品采样,计划于 2025 年下半年生产。

Remi El-Ouazzane, President of Microcontrollers, Digital ICs and RF products Group at STMicroelectronics, said: "As a leading innovator in the semiconductor industry, ST has pioneered and brought to our customers FD-SOI and PCM technologies for automotive and aerospace applications. We are now taking the next step to bring the benefits of these technologies to developers of industrial applications starting with our next-generation STM32 microcontrollers."

Remi El-Ouazzane意法半导体微控制器、数字集成电路和射频产品组总裁说:”作为半导体行业的领先创新者,意法半导体开创了汽车和航空航天应用的FD-SOI和PCM技术,并将其带给我们的客户。我们现在正在采取下一步行动,将这些技术的好处带给工业应用开发人员,首先是我们的下一代 STM32 微控制器。”

Technology benefits
Compared to ST 40nm embedded non-volatile memory (eNVM) technology used today, 18nm FD-SOI with ePCM vastly improves key figures of merit:

技术优势
与当今使用的意法半导体 40 纳米嵌入式非易失性存储器 (eNVM) 技术相比,采用 ePCM 的 18nm FD-SOI 极大地改善了关键性能指标:

  • More than 50% better performance-to-power ratio
  • 2.5-times higher non-volatile memory (NVM) density enabling larger on-chip memories
  • Three times higher digital density for integration of digital peripherals such as AI and graphics accelerators and state-of-the-art security and safety features
  • 3dB improvement in noise figure for enhanced RF performance in wireless MCUs
  • 性能功率比提高了 50% 以上
  • 非易失性存储器 (NVM) 密度提高 2.5 倍,可实现更大的片上存储器
  • 数字密度提高了三倍,用于集成数字外围设备,例如人工智能和图形加速器以及最先进的安全和安全功能
  • 噪声系数提高了 3dB,增强了无线 MCU 的射频性能

The technology is capable of 3V operation to supply analog features such as power management, reset systems, clock sources and digital/analog converters. It is the only sub-20 nm technology supporting this capability.

该技术能够进行 3V 操作,以提供模拟功能,例如电源管理、复位系统、时钟源和数字/模拟转换器。它是唯一支持这种能力的低于 20 纳米的技术。

The technology also delivers the reliability required for demanding industrial applications thanks to robust high-temperature operation, radiation hardening, and data retention capabilities already proven in automotive applications.

该技术还提供了要求苛刻的工业应用所需的可靠性,这要归功于其稳定的高温运行、辐射硬化和数据保留能力,已经在汽车应用中得到证实。

Additional information on FD-SOI and PCM is available on ST.com.

有关以下内容的更多信息 FD-SOIPCM 可在 ST.com 上找到。

Benefits to STM32 microcontroller developers and customers
Microcontrollers based on this technology will bring developers a new class of high-performance, low-power, and wireless MCUs. The large memory sizes support the growing needs of edge AI processing, multi-protocol RF stacks, over-the-air updates, and advanced security features. The high performance and large memory size capabilities will give developers using microprocessors today the option to use more highly integrated and cost-effective microcontrollers for their designs. And it will allow further steps in power efficiency for ultralow power devices where ST's portfolio is industry-leading today.

为 STM32 微控制器开发人员和客户带来的好处
基于该技术的微控制器将为开发人员带来一类全新的高性能、低功耗和无线微控制器。大容量内存支持边缘 AI 处理、多协议 RF 堆栈、空中更新和高级安全功能不断增长的需求。高性能和大内存容量将使当今使用微处理器的开发人员可以选择在设计中使用集成度更高、更具成本效益的微控制器。它还将允许进一步提高超低功率器件的功效,而意法半导体的产品组合目前处于行业领先地位。

The first microcontroller based on this technology will integrate the most advanced ARM Cortex-M core, providing enhanced performance for machine learning and digital signal processing applications. It will offer fast and flexible external memory interfaces, advanced graphic capabilities and will integrate numerous analog and digital peripherals. It will also have the advanced, certified security features already introduced on ST's latest MCUs.

首款基于该技术的微控制器将集成最先进的 ARM Cortex-M 内核,为机器学习和数字信号处理应用提供增强的性能。它将提供快速灵活的外部存储器接口、先进的图形处理功能,并将集成大量模拟和数字外围设备。它还将具有意法半导体最新MCU上已经引入的经过认证的高级安全功能。

About STMicroelectronics

关于意法半导体

At ST, we are over 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are committed to achieving our goal to become carbon neutral on scope 1 and 2 and partially scope 3 by 2027.

在意法半导体,我们有超过50,000名半导体技术的创造者和制造商,通过最先进的制造设施掌握半导体供应链。作为集成设备制造商,我们与超过20万名客户和数千名合作伙伴合作,设计和构建产品、解决方案和生态系统,以应对他们的挑战和机遇,以及支持更可持续世界的需求。我们的技术可实现更智能的出行方式、更高效的电力和能源管理,以及云连接的自主设备的大规模部署。我们致力于实现我们的目标,即到2027年在范围1和范围2上实现碳中和,部分范围3的碳中和。

Further information can be found at www.st.com.

更多信息可以在以下网址找到 www.st.com

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