Navitas Delivers Grid-Connected Energy With 3.3 KV SiC and Bi-directional GaN ICs at PE International 2024
Navitas Delivers Grid-Connected Energy With 3.3 KV SiC and Bi-directional GaN ICs at PE International 2024
Next-gen power semiconductors enable robust, efficient, grid-connected applications as part of a $1.3 trillion electrification opportunity
作为1.3万亿美元电气化机会的一部分，下一代功率半导体可实现强大、高效的并网应用
Torrance, CA – March 27th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in the upcoming Power Electronics International conference on April 16th– 17th 2024, in Brussels, Belgium.
Grid reliability is a key factor in a $1.3 trillion power semiconductor opportunity as Navitas' technologies accelerate the transition from fossil fuels to renewable energies. Navitas will introduce the latest GaNFast and GeneSiC products to the European audience, including new Gen-3 Fast SiC for high-power and higher-speed performance, plus GaNSafe – the world's most protected GaN power devices.
随着Navitas的技术加速了从化石燃料向可再生能源的过渡，电网可靠性是1.3万亿美元功率半导体机遇的关键因素。Navitas将向欧洲受众推出最新的GanFast和GeneSic产品，包括用于高功率和更高速性能的新型第三代快速碳化硅，以及世界上保护程度最高的氮化镓功率器件GanSafe。
Navitas will present the following on April 17th:
Navitas 将于 4 月 17 日发布以下内容第四:
"3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage," Dr. Ranbir Singh, EVP GeneSiC
GeneSic执行副总裁兰比尔·辛格博士：“3.3 kV 碳化硅 MOSFET 加速并网储能
Synopsis: The grid supplies energy from generators and delivers it to customers via transmission and distribution (T&D) networks. In the U.S., the use of electricity storage to support and optimize T&D has been limited due to high storage costs and limited design and operational experience. Recent improvements in storage and power technologies, however, coupled with changes in the marketplace, herald an era of expanding opportunity for electricity storage. SiC inverters will revolutionize electricity delivery, renewable energy integration, and energy storage. It is well-recognized that silicon-based semiconductors have inherent limitations that reduce their suitability for utility-scale applications.
概要：电网通过发电机提供能源，并通过输电和配电（T&D）网络将其输送给客户。在美国，由于高存储成本以及有限的设计和运营经验，使用电力存储来支持和优化输电的做法受到限制。但是，最近存储和电力技术的改进，加上市场的变化，预示着储电机会的扩大。碳化硅逆变器将彻底改变电力输送、可再生能源集成和储能。众所周知，硅基半导体具有固有的局限性，会降低其对公用事业规模应用的适用性。
"Bi-directional circuits open up new opportunities in off-grid applications," Alfred Hesener, Senior Director Industrial and Consumer Applications
工业和消费应用高级董事阿尔弗雷德·赫森纳说：“双向电路为离网应用开辟了新的机遇。”
Synopsis: Bi-directional circuits are critical to effectively smooth the supply/demand variation in renewable energy applications. In the past, they were expensive to make and complex to implement in power electronics applications. Wide bandgap GaN power ICs with integrated drive and advanced circuit functions deliver easy-to-use, reliable, high power density, and functionality for power factor correction circuits, solar inverters, and solid-state circuit breakers.
概要：双向电路对于有效平滑可再生能源应用的供需变化至关重要。过去，它们的制造成本高昂，在电力电子应用中实施起来也很复杂。具有集成驱动和高级电路功能的宽带隙氮化镓功率 IC 为功率因数校正电路、太阳能逆变器和固态断路器提供易于使用、可靠、高功率密度和功能。
To meet with Navitas at PE International, contact eurosales@navitassemi.com.
要在 PE International 与 Navitas 会面，请联系 eurosales@navitassemi.com。
About Navitas
关于 Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2024. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 250 Navitas patents are issued or pending. As of August 2023, over 125 million GaN and 12 million SiC units have been shipped, and with the industry's first and only 20-year GaNFast warranty. Navitas was the world's first semiconductor company to be CarbonNeutral-certified.
纳维塔斯半导体 （纳斯达克股票代码：NVTS）是唯一一家纯粹的下一代功率半导体公司，正在庆祝 10 年了 of power innovation 成立于 2024 年 GaNfast 功率 I 将氮化镓 (GaN) 电源和驱动器与控制、感应和保护相结合，以实现更快的充电、更高的功率密度和更高的能量节约。互补 geneSic 功 设备是经过优化的高功率、高电压和高可靠性的碳化硅 (SiC) 解决方案。重点市场包括电动汽车、太阳能、储能、家用电器/工业、数据中心、移动设备和消费品。超过 250 项 Navitas 专利已颁发或正在申请中。截至2023年8月，已经出货了超过1.25亿个氮化镓和1200万个碳化硅单元，这是业界第一个，也是唯一一个 20 年 GanFast 质保。Navitas 是世界上第一家成为的半导体公司 碳中和认证。
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Navitas Semiconductor、GanFast、GanSense、GenSic 和 Navitas 徽标是纳维塔斯半导体有限公司及其附属公司的商标或注册商标。所有其他品牌、产品名称和标志是或可能是商标或注册商标，用于识别其各自所有者的产品或服务。
Contact:
联系人：
Stephen Oliver, VP Corporate Marketing & Investor Relations
斯蒂芬·奥利弗，企业营销与投资者关系副总裁